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OmniBSI™-2 features advanced process node design rules and 300mm wafer process to enhance camera performance and capabilities.
65nm Design Rules
65nm design rules enable compact pixel circuitry for optimal pixel layout to maximize performance for enhanced image quality.
300mm Wafer Process
300mm wafer process improves the stability of production and increases die per wafer for high-volume production applications.
Backside Illumination (BSI)
Backside illumination flips pixels and circuitry to collect the light from the backside of the image sensor.
OmniBSI™-2 image sensors reduce power consumption and enable more advanced image quality than OmniBSI™.
Advanced Image Quality
OmniBSI™-2 is built according to 65nm design rules for optimal pixel layout to maximize performance for enhanced image quality.
Improvements in Performance
OmniVision’s second-generation BSI technology puts the performance of the previous 1.4-micron sensors into a 1.1-micron pixel size to achieve an increase in low-light performance, improvements in quantum efficiency, and full-well capacity — and increase die per wafer.
OmniVision’s OmniBSI™-2 targets mobile, security, medical, automotive and notebook/PC applications.