OmniBSI-2™ is the next generation of OmniVision’s industry-leading backside illumination (BSI) technology that implements new design rules to enable a pixel roadmap into the sub-micron domain. The clear leader in commercializing BSI technology, OmniVision has capitalized on its technology and manufacturing leadership by extending the quality and functionality benefits of BSI technology, while delivering major cost and performance advantages to its customers.

OmniBSI-2 offers the world’s first 1.1-micron BSI pixel. It is built on a 300 mm copper process at 65 nm design rules, developed in cooperation with strategic manufacturing partner Taiwan Semiconductor Manufacturing Company Limited (TSMC). Migrating to a 300 mm copper process enabled substantially improved design rules and more advanced process tools, resulting in tighter process control and improved defect density. By combining custom 65 nm design rules and new manufacturing process modules, OmniBSI-2 technology achieves industry-leading low-light sensitivity as well as significantly improved dark current and full-well capacity. OmniBSI-2’s custom pixel design rules also enable better pixel layout, better isolation, and significantly reduced crosstalk. These improvements over the first generation OmniBSI™ technology result in better image quality, enhanced color reproduction and improved overall camera performance in ultra-small form factors.

OmniBSI-2 technology can also be applied to larger pixel designs to achieve performance advantages that exceed current BSI and front side illumination (FSI) imaging sensors.

About BSI Technology

BSI technology involves turning the image sensor upside down and applying color filters and micro lenses to the backside of the pixel so that light is collected through the backside of the sensor. It effectively reverses the arrangement of layers so that metal and dielectric layers reside below the sensor array, providing the most direct path for light to travel into the pixel, which optimizes the fill factor to deliver best-in-class low-light sensitivity, image quality and color reproduction.

This approach differs from conventional front side illumination (FSI) architectures, where light travels to the photo-sensitive area through the front side of the pixel. This requires the light to first pass through transistors, dielectric layers and metal circuitry, which can block or deflect it into neighboring pixels, causing a reduced fill factor and additional problems such as cross talk between pixels.