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OmniBSI-2™ features advanced process node design rules and 300mm wafer process to enhance camera performance and capabilities.
  • 65nm Design Rules
    65nm design rules enable compact pixel circuitry for optimal pixel layout to maximize performance for enhanced image quality.
  • 300mm Wafer Process
    300mm wafer process improves the stability of production and increases die per wafer for high-volume production applications.
  • Backside Illumination (BSI)
    Backside illumination flips pixels and circuitry to collect the light from the backside of the image sensor.





OmniBSI-2™ image sensors reduce power consumption and enable more advanced image quality than OmniBSI™.
Advanced Image Quality
OmniBSI-2™ is built according to 65nm design rules for optimal pixel layout to maximize performance for enhanced image quality.


Improvements in Performance
OmniVision’s second-generation BSI technology puts the performance of the previous 1.4-micron sensors into a 1.1-micron pixel size to achieve an increase in low-light performance, improvements in quantum efficiency, and full-well capacity — and increase die per wafer.





OmniVision’s OmniBSI-2™ targets mobile, security, medical, automotive and notebook/PC applications.






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